| PART |
Description |
Maker |
| FDA69N25 |
N-Channel UniFETTM MOSFET 250V, 69A, 41m
|
Fairchild Semiconductor
|
| IRF634B IRFS634B IRF634BFP001 |
250V N-Channel B-FET / Substitute of IRF634 & IRF634A
250V N-Channel MOSFET
|
Samsung semiconductor
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP264 IRFP264PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A) 功率MOSFET（减振钢板基本\u003d 250V，的Rdson）\u003d 0.075ohm，身份证\u003d 38A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFU214A IRFR214A |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-251AA
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 2.2AI（四）|52AA
|
Intersil, Corp.
|
| STD4NB25 STD4NB25T4 |
N-CHANNEL 250V - 0.95 OHM - 4A - DPAK POWERMESH MOSFET
N-CHANNEL 250V - 0.95 OHM - 4A - DPAK POWERMESH MOSFET
N - CHANNEL 250V - 0.95ohm - 4A - DPAK/IPAK PowerMESHO MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRC634 |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
|
IRF[International Rectifier]
|
| IRFP264N IRFP264NPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)
|
IRF[International Rectifier]
|
| IRFR234B IRFU234B IRFU234BTUFP001 |
250V N-Channel B-FET / Substitute of IRFU234A
250V N-CHANNEL MOSFET
|
Fairchild Semiconductor
|
| IRFP244 |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
HEXFET? Power MOSFET
Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=15A)
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=15A) 功率MOSFET（减振钢板基本\u003d 250V，的Rdson）\u003d 0.28ohm，身份证\u003d 15A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FDU7N60NZTU FDD7N60NZ |
N-Channel UniFETTM II MOSFET 600V, 5.5A, 1.25
|
Fairchild Semiconductor
|
